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How to Create IC?

Published in IC Manufacturing 5 mins read

Creating an Integrated Circuit (IC), or microchip, is a sophisticated process involving numerous precise steps performed in highly controlled environments. It transforms raw silicon wafers into complex electronic components that power virtually all modern devices.

The fabrication process for ICs follows a specific sequence to build layers of materials with varying electrical properties, forming transistors, resistors, capacitors, and interconnects on a silicon substrate. Based on the provided reference, the key stages involved are:

The Core Steps of IC Fabrication

Here is a breakdown of the essential steps used to create an Integrated Circuit, starting from raw materials and ending with a finished chip:

Wafer Preparation

  • Wafer preparation is the first step in IC fabrication. This involves taking a thin slice of semiconductor material, typically silicon, and preparing its surface. The silicon must be incredibly pure and flawless. Wafers are polished to a mirror-like finish and cleaned meticulously to remove any contaminants before the complex layering and patterning process can begin.

Oxidation

  • Oxidation involves growing a thin layer of silicon dioxide (SiO₂) on the surface of the silicon wafer. This layer acts as an insulator and is crucial for protecting the underlying silicon and serving as a gate dielectric in transistors or as an isolation layer between different components. This is typically done by exposing the wafer to oxygen at high temperatures.

Diffusion

  • Diffusion is a process where impurities, known as dopants (like boron or phosphorus), are introduced into the silicon wafer to alter its electrical properties. These dopants change the silicon from intrinsic (pure) to extrinsic (P-type or N-type), which is essential for creating the junctions required for transistor operation. This is achieved by heating the wafer in an atmosphere containing the dopant atoms, allowing them to diffuse into the silicon lattice structure.

Ion Implantation

  • Ion Implantation is another method for introducing dopants into the silicon, offering much greater control over the depth and concentration of the implanted impurities compared to diffusion. In this process, dopant atoms are ionized, accelerated to high energies, and then physically shot into the silicon wafer. This technique is vital for precisely defining the active regions of transistors and other components.

Chemical Vapour Deposition (CVD)

  • Chemical Vapour Deposition (CVD) is used to deposit thin films of various materials onto the wafer surface. These materials can include insulators (like silicon dioxide, silicon nitride), semiconductors (like polysilicon), or metals. CVD works by reacting precursor gases in a chamber, causing a solid film to deposit onto the heated wafer surface. This step is fundamental for building up the different layers required for complex circuits.

Photolithography

  • Photolithography is the process used to transfer circuit patterns onto the wafer. It's similar to photography but on a microscopic scale. A light-sensitive material called photoresist is applied to the wafer. A mask, containing the desired pattern, is then placed over the photoresist, and light (like UV or DUV) is shone through the mask. The exposed or unexposed photoresist is then removed, leaving a pattern that mirrors the mask. This pattern guides subsequent etching or deposition steps.

Metallisation

  • Metallisation involves depositing layers of metal, typically aluminum or copper, onto the wafer surface. These metal layers are then patterned using photolithography and etching to create the interconnects or "wires" that link the different components (transistors, resistors, etc.) together to form the functional circuit. Multiple layers of metallisation, separated by insulating layers, are often required for complex ICs.

Packaging

  • Packaging is the final step in the IC fabrication process. After the circuits are complete on the wafer, the wafer is cut into individual dies (chips). Each good die is then mounted into a protective package made of plastic, ceramic, or metal. Fine wires are bonded from the contact pads on the chip to the pins of the package, allowing the chip to be connected to a circuit board. The package protects the delicate chip and provides a way for it to interface with the outside world.

This sequence of steps, involving precise control over materials, temperatures, and patterns, results in the functional Integrated Circuits that are ubiquitous in modern technology.

Step Description Purpose
1. Wafer Preparation Preparing and cleaning the silicon substrate. Provides the base material for the IC.
2. Oxidation Growing an insulating layer of silicon dioxide. Creates insulators and gate dielectrics.
3. Diffusion Introducing dopants by heating the wafer in a dopant atmosphere. Alters silicon conductivity to create P/N regions.
4. Ion Implantation Shooting high-energy dopant ions into the silicon. Precisely controls dopant depth and concentration.
5. Chemical Vapour Deposition (CVD) Depositing thin films of various materials (insulators, metals, etc.). Adds necessary layers for building circuit structures.
6. Photolithography Transferring circuit patterns onto the wafer using light and photoresist. Defines the layout for subsequent etching/deposition.
7. Metallisation Depositing and patterning metal layers. Creates the interconnects between components.
8. Packaging Cutting wafers, mounting chips, bonding wires, and enclosing in a package. Protects the chip and provides external connections.