Infineon has achieved a breakthrough in processing ultra-thin silicon power wafers with a thickness of 20 micrometers. This represents a significant advancement in semiconductor manufacturing.
Understanding Infineon's Ultra-Thin Wafer Technology
The 20-micrometer thickness is a remarkable achievement, particularly for silicon power wafers. This ultra-thin design enables enhanced performance and efficiency in power semiconductors.
Key Aspects of the Technology
- Pioneering Thickness: At 20 micrometers, these are among the thinnest silicon power wafers ever manufactured on a large scale.
- Wafer Diameter: This advanced processing is applied to wafers with a substantial diameter of 300 millimeters, indicating its applicability in high-volume production facilities.
- Impact on Power Devices: Thinner wafers lead to reduced electrical resistance and improved thermal management, which are crucial for power applications such as automotive, industrial, and consumer electronics. This enables more compact, efficient, and reliable power solutions.
For more detailed information on Infineon's innovations in this field, you can refer to their dedicated technology page on Ultra-thin Silicon Power Wafer Technology.
